Задача id14268

A semiconductor crystal with a volume of 1 mm3 is doped with 1022 donor atoms per m3 so that it can be used as a detector of infrared radiation with a value of l = 104 m-1 due to the transfer of carriers through a gap of 10-2 eV. The carrier lifetime is 10-2 s, the detector is cooled to 4 K. Estimate how many times the resistance of the semiconductor will change when irradiated with a power of 10-2 W. Assume that the incident radiation is completely absorbed in the detector.

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