Задача id14267

The semiconductor is doped with both donor atoms (1022 m-3) and acceptor atoms (5 • 1021 m-3), and their energy levels are located at a distance of 10-2 eV from the top and bottom of the band gap, respectively. The carrier mobility is 0.2 m2/(V•s). What is the resistance of this sample at 20 K? Note. When a semiconductor contains both n- and p-type impurities, the so-called compensation effect occurs, i.e. Donors ionize acceptors and thereby their effective number decreases.

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